? semiconductor components industries, llc, 2008 january, 2008 - rev. 0 1 publication order number: NTJD3158C/d NTJD3158C power mosfet 20 v, +0.63/-0.82 a, sc-88 complementary, esd protected features ? complementary n- and p-channel mosfet ? small size dual sc-88 package ? reduced gate charge to improve switching response ? independently connected devices to provide design flexibility ? this is a pb-free device applications ? dc-dc conversion circuits ? load/power switching with level shift maximum ratings (t j = 25 c unless otherwise noted) parameter symbol value unit drain-to-source voltage v dss 20 v gate-to-source voltage v gs 12 v n-channel continuous drain current (note 1) steady state t a = 25 c i d 0.63 a t a = 85 c 0.46 t 5 s t a = 25 c 0.72 p-channel continuous drain current (note 1) steady state t a = 25 c i d -0.82 a t a = 85 c -0.59 t 5 s t a = 25 c -0.93 power dissipation (note 1) steady state t a = 25 c p d 0.27 w t 5 s 0.35 pulsed drain current n-ch tp = 10 s i dm 1.3 a p-ch -1.6 operating junction and storage temperature t j , t stg -55 to 150 c source current (body diode) i s 0.46 a lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c thermal resistance ratings parameter symbol max unit junction-to-ambient C steady state (note 1) r ja 460 c/w junction-to-ambient C t 5 s (note 1) r ja 357 junction-to-lead (drain) C steady state (note 1) r jl 226 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces). (top view) http://onsemi.com d 1 g 2 s 2 s 1 g 1 d 2 6 5 4 1 2 3 n-ch 20 v 375 m @ 4.5 v r ds(on) max 0.63 a i d max v (br)dss 445 m @ 2.5 v 300 m @ -4.5 v p-ch -20 v 500 m @ -2.5 v -0.82 a sc-88 (sot-363) (6-leads) device package shipping ? ordering information NTJD3158Ct1g sc-88 (pb-free) 3000/tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. tg m 1 6 1 marking diagram & pin assignment sc-88 (sot-363) case 419b style 26 tg = specific device code m = date code = pb-free package (note: microdot may be in either location) s1 g1 d2 d1 g2 s2 NTJD3158Ct4g sc-88 (pb-free) 10000/tape & reel n-ch p-ch
NTJD3158C http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol n/p test condition min typ max unit off characteristics (note 3) drain-to-source breakdown voltage v (br)dss n v gs = 0 v i d = 250 a 20 v p i d = -250 a -20 drain-to-source breakdown voltage temperature coefficient v (br)dss / t j 22 mv/ c zero gate voltage drain current i dss n v gs = 0 v, v ds = 16 v 1.0 a p v gs = 0 v, v ds = -16 v 1.0 gate-to-source leakage current i gss n v ds = 0 v, v gs = 12 v 10 a p v ds = 0 v, v gs = 4.5 v 1.0 p v ds = 0 v, v gs = 12 v 6.0 on characteristics (note 2) gate threshold voltage v gs(th) n i d = 250 a 0.6 1.5 v p i d = -250 a -0.45 drain-to-source on resistance r ds(on) n v gs = 4.5 v, i d = 0.63 a 290 375 m p v gs = -4.5 v, i d = -0.88 a 255 300 n v gs = 2.5 v, i d = 0.40 a 360 445 p v gs = -2.5 v, i d = -0.71 a 345 500 forward transconductance g fs n v ds = 4.0 v, i d = 0.63 a 2.0 s p v ds = -10 v, i d = -0.88 a 3.0 charges, capacitances and gate resistance input capacitance c iss n f = 1 mhz, v gs = 0 v v ds = 20 v 33 46 pf p v ds = -20 v 155 output capacitance c oss n v ds = 20 v 13 22 p v ds = -20 v 25 reverse transfer capacitance c rss n v ds = 20 v 2.8 5.0 p v ds = -20 v 18 total gate charge q g(tot) n v gs = 4.5 v, v ds = 10 v, i d = 0.63 a 1.3 3.0 nc p v gs = -4.5 v, v ds = -15 v, i d = -0.88 a 2.2 gate-to-source charge q gs n v gs = 4.5 v, v ds = 10 v, i d = 0.63 a 0.2 p v gs = -4.5 v, v ds = -15 v, i d = -0.88 a 0.5 gate-to-drain charge q gd n v gs = 4.5 v, v ds = 10 v, i d = 0.63 a 0.4 p v gs = -4.5 v, v ds = -10 v, i d = -0.88 a 0.65 switching characteristics (note 3) turn-on delay time t d(on) n v gs = 4.5 v, v dd = 10 v, i d = 0.5 a, r g = 20 83 ns rise time t r 227 turn-off delay time t d(off) 786 fall time t f 506 turn-on delay time t d(on) p v gs = -4.5 v, v dd = -10 v, i d = -0.5 a, r g = 20 5.8 rise time t r 6.5 turn-off delay time t d(off) 13.5 fall time t f 3.5 drain-source diode characteristics forward diode voltage v sd n v gs = 0 v, t j = 25 c i s = 0.23 a 0.76 1.1 v p i s = -0.48 a -0.8 -1.2 n v gs = 0 v, t j = 125 c i s = 0.23 a 0.63 p i s = -0.48 a -0.66 2. pulse test: pulse width 300 s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperatures.
NTJD3158C http://onsemi.com 3 typical performance curves (n-ch) (t j = 25 c unless otherwise noted) 0 1.4 1 6 2 v ds , drain-to-source voltage (volts) i d, drain current (amps) 0.6 0.2 0 figure 1. on-region characteristics 0.4 1.2 2 1.2 2.4 1 0.6 0.2 0.8 0 0 figure 2. transfer characteristics v gs , gate-to-source voltage (volts) 0.1 0.4 1 0.3 0.2 0 figure 3. on-resistance vs. drain current and temperature i d, drain current (amps) r ds(on), drain-to-source resistance ( ) i d, drain current (amps) figure 4. on-resistance vs. drain current and temperature -50 0 -25 25 1.4 1.2 1 0.8 0.6 50 125 100 figure 5. on-resistance variation with temperature t j , junction temperature ( c) t j = 25 c 0.7 0.2 0.6 t j = -55 c t j = 125 c 75 150 i d = 0.63 a v gs = 4.5 v and 2.5 v r ds(on), drain-to-source resistance (normalized) 4 25 c 2 1.2 v 0 1.4 figure 6. capacitance variation 1.4 v 1.6 v 1.8 v 10 8 v ds 10 v 0.4 v gs = 2 v v gs = 4.5 v to 2.2 v 0.4 0.8 1.2 0.8 0.4 1.6 t j = 125 c 1.2 0.8 v gs = 4.5 v t j = -55 c t j = 25 c 0.1 0.4 1 0.3 0.2 0 i d, drain current (amps) r ds(on), drain-to-source resistance ( ) 0.7 0.2 0.6 t j = 125 c 0 1.4 0.4 1.2 0.8 v gs = 2.5 v t j = -55 c t j = 25 c v gs = 0 v 10 0 80 60 40 20 0 drain-to-source voltage (volts) c, capacitance (pf) t j = 25 c c oss c iss c rss 520 15 0.6 0.5 0.5 0.6 1.8 1.6
NTJD3158C http://onsemi.com 4 typical performance curves (n-ch) (t j = 25 c unless otherwise noted) v gs figure 7. gate-to-source and drain-to-source voltage vs. total charge 0 0.6 4 1 0 figure 8. diode forward voltage vs. current q g , total gate charge (nc) v gs, gate-to-source voltage (volts) i d = 0.63 a t j = 25 c 1 0.8 2 3 5 0.4 0.2 1.4 0.8 0.1 0 v sd , source-to-drain voltage (volts) i s , source current (amps) v gs = 0 v 0.7 0.6 0.4 0 0.4 0.5 0.6 0.2 0.3 1 0.2 t j = 25 c t j = 150 c 1.2 q g(tot) q gs q gd
NTJD3158C http://onsemi.com 5 typical performance curves (p-ch) (t j = 25 c unless otherwise noted) -2 v 125 c 0 1 0.75 1.2 0.8 -v ds , drain-to-source voltage (volts) -i d, drain current (amps) 0.25 0 0.4 figure 9. on-region characteristics 0 1 1.5 12 0.8 0.7 0.1 0.5 0 3.5 figure 10. transfer characteristics -v gs , gate-to-source voltage (volts) 15 100 10 figure 11. on-resistance vs. drain current and temperature -v ds , drain-to-source voltage (volts) -i dss, leakage current (na) -i d, drain current (amps) 01 0.1 figure 12. on-resistance vs. drain current and gate voltage -i d, drain current (amps) -50 0 -25 25 1.0 0.8 0.6 0.4 0 50 125 100 figure 13. on-resistance variation with temperature t j , junction temperature ( c) t j = 25 c 10000 5 t j = -55 c v gs = 0 v 0.3 75 150 t j = 25 c i d = -0.88 a v gs = -4.5 v r ds(on), drain-to-source resistance (normalized) 25 c r ds(on), drain-to-source resistance ( ) 2.0 v gs = -4.5 v -1 v 020 -1.25 v -1.5 v -1.75 v 0.25 0.2 1.6 2 1000 0.25 0.5 0.75 0.15 v gs = -4.5, -3.5 & -2.5 v figure 14. drain-to-source leakage current vs. voltage 0.4 1 1.0 -i d, drain current (amps) 2.5 0 r ds(on), drain-to-source resistance ( ) v gs = -4.5 v 0.5 2.0 v gs = -2.5 v 0.7 0.9 1.5 0.5 0.9 10 t j = 125 c t j = -55 c 0.5 0.8 0.6 0.2 t j = 25 c v gs = -1.8 v 1.8 1.6 1.4 1.2 t j = 125 c t j = 150 c 2.5 3 0.2 0.3 0.4 0.5 0.6 v ds -20 v
NTJD3158C http://onsemi.com 6 typical performance curves (p-ch) (t j = 25 c unless otherwise noted) v ds = 0 v v gs = 0 v 0 10 10 350 150 100 50 0 20 gate-to-source or drain-to-source voltage (volts) c, capacitance (pf) 0 4 1 0 q g , total gate charge (nc) -v gs, gate-to-source voltage (volts) t j = 25 c c oss c iss c rss i d = -0.88 a t j = 25 c 250 1.2 0.8 2 3 q2 q1 10 1 10 1 100 r g , gate resistance (ohms) t, time (ns) v dd = -10 v i d = -0.8 a v gs = -4.5 v 5 200 5 t d(off) t d(on) t f t r v gs v ds 15 0.4 0.6 0 -v sd , source-to-drain voltage (volts) -i s , source current (amps) v gs = 0 v t j = 25 c 0.7 0.1 0 0.3 0.5 figure 15. capacitance variation figure 16. gate-to-source voltage vs. total gate charge figure 17. resistive switching time variation vs. gate resistance figure 18. diode forward voltage vs. current 5 300 2 1.6 qt 100 0.2 0.5 0.3 0.1 0.2 0.4 0.4
NTJD3158C http://onsemi.com 7 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 419b-01 obsolete, new standard 419b-02. e 0.2 (0.008) mm 123 d e a1 a a3 c l 654 -e- b 6 pl sc-88/sc70-6/sot-363 case 419b-02 issue w dim min nom max millimeters a 0.80 0.95 1.10 a1 0.00 0.05 0.10 a3 b 0.10 0.21 0.30 c 0.10 0.14 0.25 d 1.80 2.00 2.20 0.031 0.037 0.043 0.000 0.002 0.004 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 min nom max inches 0.20 ref 0.008 ref h e h e e 1.15 1.25 1.35 e 0.65 bsc l 0.10 0.20 0.30 2.00 2.10 2.20 0.045 0.049 0.053 0.026 bsc 0.004 0.008 0.012 0.078 0.082 0.086 style 26: pin 1. source 1 2. gate 1 3. drain 2 4. source 2 5. gate 2 6. drain 1 mm inches scale 20:1 0.65 0.025 0.65 0.025 0.50 0.0197 0.40 0.0157 1.9 0.0748 *for additional information on our pb-free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. typical parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including typicals must be validated for each customer application by customer's technical experts. scillc does n ot convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended f or surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in a ny manner. NTJD3158C/d publication ordering information n. american technical support : 800-282-9855 toll free ?usa/canada europe, middle east and africa technical support: ?phone: 421 33 790 2910 japan customer focus center ?phone: 81-3-5773-3850 literature fulfillment : ?literature distribution center for on semiconductor ?p.o. box 5163, denver, colorado 80217 usa ? phone : 303-675-2175 or 800-344-3860 toll free usa/canada ? fax : 303-675-2176 or 800-344-3867 toll free usa/canada ? email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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